| 摘要 |
PURPOSE:To flatten the surface of an oxide film in a semiconductor device without lowering its yield by forming an oxide film on a substrate formed with an element and heat treating it in high pressure gas containing P. CONSTITUTION:A thermal oxidation film 2 is formed on an Si substrate 1, and a polysilicon film 3 is selectively formed thereon. After an SiO2 film 4 is further laminated thereon by the reaction of SiH4 with O2, it is treated in Ar containing 1% of PH3 added with small amount of O2 thereto at 7kg/cm<2> and 900 deg.C for 1hr. This treatment allows the P to be impregnated into the film 4 to lower the melting point of the SiO2 to thus melt the SiO2 film 4 so as to flatten the surface thereof. Since this configuration can flatten the oxide film at relatively lower temperature, it can prevent disconnection of wires without lowering its yield. |
