| 摘要 |
PURPOSE:To improve the resisting quality in di/dt and switching capacity by providing a high impurity concentration region continuously under a gate constituting pnpn thyristor and a metal contact surrounding the gate with an interval. CONSTITUTION:A PB layer is grown on an NB layer. In the surface layer of the PB layer, an annular NE layer 3 is provided by diffusion to form a pnpn structure. Then a gate 5 is provided in the center of the annular layer 3 on the PB layer, and a metal contact 6 is provided surrounding the gate 5 with an interval. The exposed portion of the junction end of the layer 3 on the opposite side to the gate 5 is short- circuited by a cathode contact 4 to form a thyristor. In the constitution, a shallow high impurity concentration layer 7 of the same conductive type as the PB layer is additionally provided in the PB layer so as to be under the gate 5 and the contact 6. This reduces the resistances at the bonded portion of the gate 5 and between the gate 5 and the contact 6. |
