| 摘要 |
PURPOSE:To achieve a high integration of a device by forming an oxide on the surface of a substrate, excluding the region of an insulating material having a slow oxidation speed, and also by reducing a gap between elements provided for an opening formation by means of a selective etching given to the non-oxidized insutating material at the opening section. CONSTITUTION:A silicon oxidation film 2 is formed by giving a heat oxidation on the surface of a p-type silicon substrate 1. Then a polycrystalline or a molybdenum silicide 3 is formed, a selective etching is given and a gate electrode 4 is formed. Next, after giving an oxidation 5 on the whole surface, an ion injection 6 is performed, a source and drain region 7 is formed, and then the silicon film is removed from the said region. As the oxidation film on the gate surface is too heavy, it is reduced to a thinner film. Then a silicon nitriding film layer 8 is formed by giving an ion injection, oxidized by heat, an etching is given and an opening 19 is formed. Then a thin metal film is accumulated on the whole surface and a source and drain electrode 10 is formed. |
