| 摘要 |
PURPOSE:To provide a bidirectional photo couple thyristor adapted for a photo drive switch or the like by forming two thyristors of pnpn and npnp four layers in one semiconductor substrate while isolating them with isolating bands having a width larger than 0.05mm. formed in high specific resistance n-type base region. CONSTITUTION:A high specific resistance n-type base region N2 is diffused and formed in an n-type semiconductor substrate 1, and p-type regions P1, P2 diffused and formed in the substrate 1 while surrounding both the side surfaces and the bottom surface. Then, a region P1 is passed through the center on the back surface of the substrate 1, an isolating band having a width of larger than 0.05mm. is formed into the region N2, a glass layer 6 is coated on the wall surface, and n-type region N1 is diffused and formed on the back surface of the region P2. Thereafter, a p-type region P3 is formed in one region N2 at both sides of the isolation band, and an n- type region N3 is formed therein to form one thyristor with the regions P1N2P3N4, and to similarly form another thyristor with the regions N1P2N2P4. In this manner, the regions N3 and P4 are connected, and the regions P1 and N1 are connected, an LED is employed on the surface, and a light is irradiated thereto. |
