| 摘要 |
PURPOSE:To change the polycrystalline Si into a single crystal of Si at final stage by a method wherein a crystal particle which composes a polycrystalline Si is irradiated by a contracted laser beam and swept by the beam at specified speed. CONSTITUTION:A polycrystalline Si layer of 3500Angstrom thickness is grown on an SiO2 film on an Si substrate surface by means of CVD method. Next thereto a Q-switched pulse laser beam of energy density 1.4J/cm<2> irradiates it, and the polycrystalline layer is fused, and the size of a crystal particles is grown to 10-20mum. Next an Ar laser is generated in CW continuously and contracted its beam diameter in 20mum, with this beam a polycrystalline particle 4' selected among many polycrystalline particles 4 is irradiated. By the beam sweeping in the speed of 2-5m/sec and utilizing fused crystal particle 4' as a source the adjacent crystal particles are fused into it, and gradually this region is grown, and a single crystal Si layer oriented to the axial direction of the first crystale particle 4' is grown on the whole surface. |
