METHOD FOR PROCESSING PLASMA

摘要

A plasma processing method is provided to perform a plasma curing process on a photoresist mask pattern by using a plasma state of a gas including nitrogen. A plurality of layers are stacked on a semiconductor substrate(206). A process target having a photoresist mask pattern(201) is installed on the layers. In a plasma processing method using a plasma etching apparatus, a curing process is performed to reduce concavo-convex parts of a surface and a side of the photoresist mask pattern by forming a plasma state of a gas including nitrogen and performing a plasma-curing process on the photoresist mask pattern. A plasma ashing process for the layers under the photoresist mask pattern is performed by using the photoresist mask pattern having the reduced concavo-convex parts.