| 摘要 |
PURPOSE:To perforate an opening at an insulating film of a multiplayer wiring semiconductor device by stabilizing the anodization of an aluminum film and controlling the depth of corrosion of an insulating film between the layers in preferable reproducibility. CONSTITUTION:An Si2N4 film 5 is formed on an aluminum film 4 on an SiO2 film 3 having an opening communicatng with a diffused layer 2. With a resist mask 6 coated thereon the film 5 is plasma etched with CF4 gas to expose aluminum film 4 and to anodize it to convert it into porous Al2O3 film7. With a resist mask 8 coated thereon the film 5 is anodized to be converted into an SiO2 film 10 is vapor phase grown, an SiO2 coated film 11 is superimposed thereon, a resist mask 12 is formed thereon and perforated with an opening, and an aluminum film 13 is formed thereon. According to this method, the Si3N4 mask is empolyed with preferably adhesiveness when anodizing the aluminum to eliminate an improper perforation of the opening. Since it perforates the opening by utilizing the etching speed difference between the SiO2 and the aluminum, the aluminum is not excessively etched to reduce the step difference and to prevent the disconnection of wires. |
