| 摘要 |
PROBLEM TO BE SOLVED: To achieve an optoelectronics semiconductor chip including a quantum well structure operable to generate light at high efficiency in operation.SOLUTION: In at least one embodiment of an optoelectronics semiconductor chip, the optoelectronics semiconductor chip (1) is based on nitride based material, and includes at least one active quantum well (2). The at least one active quantum well (2) is formed to produce electromagnetic waves in operation. Further, the at least one active quantum well (2) includes N zones (A) overlapping with each other in a direction in parallel to a growth direction z of the semiconductor chip (1), where N is a natural number of 2 or larger. Each average indium content c in at least two zones of the zones (A) of the at least one active quantum well (2) is different from each other.SELECTED DRAWING: Figure 1 |
