| 摘要 |
PURPOSE:To make it possible to reliably conduct an autoaligning operation on a semiconductor substrate and a mask by a method wherein a conductive film is interposed between a field insulating film and an interlayer insulating film and/or a protective film, and the edge part of the pattern for alignment is steeply formed. CONSTITUTION:An alignment pattern 5 is composed of the stepping formed by the field insulating film 2 on the main surface of a semiconductor substrate 1, the conductive film 6 located above the film 2, an interlayer insulating film 4 consisting of a phosphorus glass film and the like, for example, and the protective film 22 consisting of the nitrogen film and the like formed by plasma CVD, for example, and the stepping on its edge part is steeply formed. Accordingly, when a laser beam or a single color beam is projected on the alignment pattern 5, the scattering light which is required for the detection of pattern is increased, and as a result, the detection of position of the semiconductor substrate 1 can be conducted reliably. As a result, the automatic alignment of the semiconductor substrate 1 and a photomask can be conducted reliably. |
