| 摘要 |
PURPOSE:To avoid the blooming phenomenon for the semiconductor pickup element composed of the charge coupling element, by flowing the extra charge generated when the excessive beams are applied toward the charge absorption channel. CONSTITUTION:When the beam is given to photosensitive part 1, the charge is stored in accordance with the volume of the beam and then transferred to output part 6 via transfer electrode 2 and transfer part 4 to be detected. Charge absorption channel 9 is provided in adjacent to transfer electrode 3, and thus the normal pulse is applied to electrode 2 at the driving time. However, the DC voltage which higher than the low level of the pulse of electrode 2 is applied to electrode 3 adjacent to channel 9. As a result, if the extra charge is caused by the excessive beams given to part 1, the extra charge flows toward channel 9 to avoid the blooming phenomenon in which the charge is scattered to the adjacent regions. |
