| 摘要 |
PURPOSE:To enhance the integrity of an integrated circuit with a self-aligning structure and accelerate the operation speed of the circuit. CONSTITUTION:A field oxide film 302 and a gate oxide film 303 are formed on an n-type silicon substrate 301. Then, third group elements such as boron, antimony or the like are contained in MOSi2, and the MOSi2 is sputtered or evaporated thereon. Thereafter, the MOS2 is retained in required electrode portion, and etched. Further, p-type regions 307 and 308 are formed under the source and drain electrodes 304 and 305 by annealing it. Then, with the MOSi2 as a mask ion of the third group element is implanted to form source and drain regions 309 and 310 in the substrate 301. |
