Process for forming metal and metal silicide films

摘要

In the past a film of a transition metal silicide or an aluminum silicon alloy has been deposited on a semiconductor substrate by vacuum evaporation and used as an electrode or wiring of a semiconductor device. According to the present invention, the film is produced by a sputtering method wherein the silicon component of the film is not supplied from the target but from a gaseous silicon compound contained in the sputtering atmosphere.