| 摘要 |
The specification discloses a lateral diac including a semiconductor body having three alternating layers of first and second opposite conductivity types of semiconductor material. An isolating member such as a groove is disposed through one of the exterior semiconductor layers in order to geometrically and electrically isolate the layer into two regions. Electrodes are attached to each of the isolated regions and are disposed in the same plane for connection to leads on a common surface. The lateral diac thus formed is normally in a nonconductive high impedance condition, but is operable in response to a predetermined breakover voltage applied across the electrodes to operate in an avalanche mode to break back to a negative resistance characteristic. The lateral construction of the diac enables the diac to be easily mounted for thick film use.
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