| 摘要 |
PURPOSE:To increase the current transfer rate and further to minimize the drop in the current transfer rate due to the increase of the injector current, by making the emitter-collector interface longer than the shorter side of the rectangular base-collector region. CONSTITUTION:In order to lengthen the emitter-collector interface of a lateral PNP-transistor, P-type emitter regions 18A and 18B are formed corresponding to the two shorter sides of rectangular base-emitter region 20, and at the same time, N-type base regions 22A and 22B are fixed. That is, essentially, two PNP-transistors are formed. 28A, 28B indicate the injector contacts corresponding to emitter regions 18A and 18B. Consequently, the emitter-collector interface of the lateral transistor becomes nearly twice as large as that of the conventional device. As a result, injection is operated from both sides of base-emitter region 20 and the current transfer rate is increased. |
