| 摘要 |
PURPOSE:To form an ideal potential well under transfer electrode by self-matching the end of transfer electrode terminal and the end of island-shaped semi-conductor which becomes potential barrier. CONSTITUTION:An n-layer 13, SiO2 film 12, polysilicon conductive layer 14, SiO2 film 15 and Si3N4 film 16 are laminated over each other on p-type silicon substrate. Then an opening is formed in films 15, 16 by applying resist mask, and p-layer 21 is formed with ion injection. SiO2 film 18 of sufficiently heavy thickness is formed by removing the mask. Next after selectively etching films 16, 15, resist mask 19 is applied and layer 14 is etched jointly using film 18, so that transfer electrode 14 is formed. SiO2 film 12 is etched using electrode 14 as mask and is again covered by SiO2 film. Following this process, resist mask 20 is applied and ion is injected. Then, p-layer 22 is established and mask 20 is removed, accompanied by the selective formation of transfer electrode 23 based on polysilicon. Under this constitution, one terminal of transfer electrode and one terminal of the potential barrier part are coupled to be self-matched, thus making available satisfactory two-phase CCD. |
