| 摘要 |
PURPOSE:To form a uniform-thickness film on the inside of a reaction tube with a simple device by heating the outside of the tube with a heating element moving along the longitudinal direction while feeding a desired film forming gas into the tube. CONSTITUTION:The vapor phase growing device is composed of reaction tube 31 made of quartz or silicon carbide, heating element 37, heating element support 38, driving unit 40, rotary shaft 41, etc. Tube 31 is evacuated with an exhaust unit and heated by moving element 37 along the outside of tube 31 in the longitudinal direction by the action of unit 40, shaft 41, support 38, etc. while feeding a desired reaction gas from gas source 34 through valve 33, thereby uniformly forming a silicon dioxide film, a silicon nitride film, a phosphosilicate glass film, a polycrystal silicon film, or other film on the inside of tube 31. |
