| 摘要 |
PURPOSE:To provide non-volatile memories on a chip formed through Si gate process with ease and no deterioration by utilizing Al wiring of Si gate structure as a gate electrode for each non-volatile memory MNOS and extending the Si3N4 film over the circuit element of other Si gate structure. CONSTITUTION:Formation of source and drain layers and separation of channel region for each MNOS element is carried out with use of a mask 10. After making openings selectively on insulation film subsequently coated, an SiO2 film 15 of approx. 500Angstrom thickness is coated and then an opening 16 is selectively made at the gate region for an MNOS element. SiO220 of approx. 100Angstrom thickness is coated selectively and then Si3N421 is stacked thereon. After making openings on the film 21 selectively, N-channel MNOS are formed in C-MOS Si gates process at the same time. With this method, each non-volatile memory will not cause the deterioration in characteristic of holding even through the heat treatment of Si gate process and each MNOS element can be easily formed on the same chip simultaneously. |
