| 摘要 |
PURPOSE:To enable high density, by memorizing one memory cell with multi-value information ternary or more. CONSTITUTION:The stored charge of the memory cell MC is classified into n(greater than 2) sets of steps to discriminate to which part of the n sets of steps the charge belongs. For example, the information 0,1,2...,n-1 is determined to which part of the potential well the charge is stored. Further, at the information discrimination, MOSFET of MC is driven with the word line WL, the information is delivered to the bit line BL, the line BL is connected to three sets of the sense circuits SAi, each output is fed to the output buffer OB1 via the input and output line I/O i, and the outputs Dout1, Dout2 corresponding to the combination of the I/O i state are obtained. |
