| 摘要 |
PURPOSE:To easily produce the titled film having high purity in excellent efficiency and reproducibility, by placing a plurality of specific hot-wall epitaxy crucibles in a vacuum chamber and transferring a substrate at a proper time above the top opening of the crucible. CONSTITUTION:A center crucible 5 having a bottom-closed elongated cylindrical form furnished with an ejection nozzle 6 via a connecting part 7 is extended through the center of a bottom of a film-forming chamber 3 having U-shaped longitudinal section. A peripheral crucible 4 has an ejection nozzle 10 between the bottom of the film- forming chamber 3, the outer wall of the center crucible 5 and the wall 8 forming the peripheral crucible. Hot-wall epitaxy crucibles 2 are constructed of the center crucible 5 and the peripheral crucible 4. The hot-wall epitaxy crucibles 2 are placed in a vacuum chamber 1, a material (e.g. Zn) in the crucible 5 is heated with a heater 13, a material (e.g. S) in the crucible 4 is heated with a heater 14 and the film-forming chamber 3 is heated with a heater 11 to respective specific temperatures. A horizontally slidable substrate holder 14 composed of a shutter part 15 and a substrate-holding part 16 is optionally slidden from the closed state of Fig. A to the state of Fig. B to form the titled film (e.g. ZnS film) on a substrate 18 held with the substrate-holding part 16.
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