| 摘要 |
<p>PURPOSE:To enable the formation of the patterns below the resolution threshold of an optical system to good rectangular shapes without thinning film by increasing the light quantity of an exposure by using a non-benzophenone resist and the patterns which can be resolved by the optical system in the resist pattern formation by an (i) ray lithographic technique. CONSTITUTION:Transparency is increased by using photosensitive paper of the non-benzophenone system having less absorption to the (i) rays. The (i) rays are of 365nm wavelength of a light source lamp and are 0.4mum in resolution and are higher in resolution than the resolution of the conventional (g) rays (436nm wavelength and 1mum resolution). An effect of not dissolving the resist parts not irradiated with light with an alkali, i.e., prohibiting alkaline solubility, is enhanced in order to increase the contrast in development. As a result, the always excessive exposure is executed by utilizing reticule patterns of about 0.5mum, by which the perpendicular patterns of <=0.3mum are formed with the (i) ray high-resolution resist of the non-benzophenone system.</p> |
