| 摘要 |
Semiconductor devices which exhibit negative differential resistance and comprise a semiconductor material in contact with an electrode and a resistive film layer, preferably comprising an alloy of nickel and chrome is disclosed. The slope of the negative resistance region and the current filament area can be varied by altering the sheet resistivity of the resistive film layer. This allows the semiconductor device to be incorporated in a single monolithic thin film integrated circuit in which the thickness of the semiconductor layer utilized in the integrated circuit is constant. A method for fabricating the aforementioned semiconductor device is also disclosed.
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