| 摘要 |
PURPOSE:To reduce the time required for removing the resist having been used as a mask by exposing the resist to an O2 plasma atmosphere after Freon-base plasma etching and further dipping the same in a hot sulfuric acid. CONSTITUTION:In the manufacture of semiconductor integrated circuits, insulator films are etched by Freon base plasma with resist as a mask. Next, the resist film is exposed for more than 5 minutes to an O2 plasma atmosphere, after which it is dipped in a hot sulfuric acid. This eliminates the possibility for the heavy metals in the resist to remain as soil on the material being etched and does not degrade element characteristics. |
