| 摘要 |
<p>PURPOSE:To avoid the degradation of the device incorporating the electrode through the efficient formation of the electrode easy for bonding on the semiconductor crystal. CONSTITUTION:The AuSn 2 is evaporated on the N type GaAs substrate having pn junction, the AuBe 5 in ohmic contact on the P epitaxial layer through the resist mask 3 is evaporated, and it is treated at 450 deg.C for 5 minutes. Further, Au 6 is evaporated as the bonding metal, the films 5 and 6 are peeled off with the resist mask to form the specified electrode 7. Further, it is cleaned by immersing it in the solution of H2SO4 diluted H2O2. With this method, the electrode easy for bonding can be formed easily to avoid the formation of the alloy thin film on the major plane other than the electrode.</p> |
