| 摘要 |
<p>PURPOSE:To enable impurity concentration distributions such as of C, O in Si substrate to be evaluated accurately and rapidly by radiating infrared ray fluxes so as to intersect perpendicularly to the main plane of the Si substrate and yet letting the infrared rays scan in arbitrary directions. CONSTITUTION:Infrared rays generated in the light source 7 of a light source part 1 are divided to two components by concave mirrors 8, 9. The infrared rays condensed at the mirror 8 are further condensed in a concave mirror 10 and arrive at a movable mirror 14d through stationary mirrors 14a thru 14c, thus becoming the infrared ray flux on the measuring sample 5 side of a sample chamber 3. The infrared rays condensed at the mirror 9 are condensed in a concave mirror 12 and are made to the infrared ray flux 13 on the reference sample 6 side. As the mirrors 14a thru 14c are moved in a fixed direction, the sample 5 is scanned over the entire surface. The changes of only the abosorptivity of the infrared ray of the specific wavelengths in a spectroscope part 2 are plotted in a recorder 4, whereby the line analysis in the scanning direction of the infrared rays is made possible and the two-dimensional concentration distributions of the specific element are evaluated.</p> |
