发明名称 Extensive monocrystalline film prodn. at high growth rate - by passing temp. profile along polycrystalline or molten strip to give convex growth junction
摘要 Prodn. of monocrystalline films of large surface area at high growth rate is achieved by passing a temp. profile along a polycrystalline or molten strip of the starting material, so that the transition into the monocrystalline zone takes place with a growth surface, the intersections of which, parallel to the plane of the film, have convex curature. The process can be used for making films up to ca. 1 mm thick. Thin films of Ag halides are useful in photography and holography and, with suitable doping, for ionising corpuscular radiation detectors, whilst thin semiconductor films are also of interest. The growth rate can be increased by a factor of 100, even with substances having poor thermal conductivity.
申请公布号 DE2817285(A1) 申请公布日期 1979.10.31
申请号 DE19782817285 申请日期 1978.04.20
申请人 SCHOPPER,ERWIN,PROF.DR.;WENDNAGEL,THEODOR 发明人 SCHOPPER,ERWIN,PROF.DR.;WENDNAGEL,THEODOR
分类号 C30B13/00;C30B13/30;C30B15/00;C30B15/06;C30B15/22 主分类号 C30B13/00
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