| 发明名称 |
Method for passivating III-V compound semiconductors |
| 摘要 |
High quality native surface passivation dielectrics on Group III-Group V compound semiconductors are produced by thermal conversion of a surface layer having a specially provided composition. The electrical properties of these dielectrics meet the requirements for dielectric and passivation layers over semiconductor devices generally and in field effect devices in particular.
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| 申请公布号 |
US4172906(A) |
申请公布日期 |
1979.10.30 |
| 申请号 |
US19770796120 |
申请日期 |
1977.05.11 |
| 申请人 |
ROCKWELL INTERNATIONAL CORP |
发明人 |
PANCHOLY, RANJEET K |
| 分类号 |
H01L21/314;H01L21/265;H01L21/316;(IPC1-7):B05D5/12 |
主分类号 |
H01L21/314 |
| 代理机构 |
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