| 摘要 |
<p>The semiconductor device comprises at least two semiconductor elements of which atleast one can be controlled, the elements being housed in a common receptacle (11). The main connections (A2, K1, A1, A2) form a row located on a connection plate (10) of the receptacle which is provided with drillings for mounting on a heat dissipator or a base support. Each connection of a control electrode (G1, G2) is assembled with an auxiliary cathode connection (HK1, HK2) in a connection socket of synthetic material (13) provided at one end of the connection plate (10). The application of the ignition pulse in the control zone of the semiconductor element to be controlled is effected simply by means of a double conductor provided at its extremity with contacts inserted in the plug corresponding to the socket (13). The socket (13) can be made together in one piece with the connection plate or be fixed thereon ultimately. </p> |
