| 摘要 |
PURPOSE:To increase the light emitting efficiency, by performing molten back the substrate and making the S in the substrate to the desired concentration, after contacting Ga solution to the GaP substrate doped with S. CONSTITUTION:At one end of the quartz reaction furnace 10, the NH3 gas inlet tube 11 to add the N2 atoms being the center of green color emission and the Zn gas introducing tube 12 for P type crystal formation are respectively provided. Further, the slider 15 made of quartz and the liquid phase growing port 14 consisting of the main body 16 located on it are contained in the furnace 10, and the GaP substrate 17 doped by S is located in the concave 18 of the slider 15. Further, the main body 16 is provided with the opening 19 to insert the substrate 17 and the opening 20 to contain the Ga solution 27, it is covered with the covers 21 and 22, and at the back end of the main body end of the main body 16, a number of small holes 23 for impurity addition are provided. With this constitution, the substrate 17 and the solution 27 are contacted first, and the substrate 17 and the small holes 27 are opposed each other, the substrate 17 surface is molten back with baking, and, S is given to the specified concentration. |
