| 发明名称 |
Utilizing saturated and unsaturated halocarbon gases in plasma etching to increase etch of SiO{HD 2 {B relative to Si |
| 摘要 |
{PG,1 A method of plasma etching silica at a faster rate than silicon involves using a gaseous mixture containing an unsaturated halocarbon and a saturated halocarbon. The preferred halocarbon contains fluorine. A preferred embodiment is a gaseous mixture containing C{HD 3{L F{HD 6 {L and C{HD 2{L F{HD 6{L .
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| 申请公布号 |
US4162185(A) |
申请公布日期 |
1979.07.24 |
| 申请号 |
US19780888882 |
申请日期 |
1978.03.21 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORP |
发明人 |
COBURN, JOHN W;WINTERS, HAROLD F |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/311;(IPC1-7):C23F1/00 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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