| 摘要 |
A dense film of silicon nitride is deposited by a plasma discharge in a vapor of azidotrimethylsilane (AZS) (CH3)3 SiN3. AZS is less reactive and easier to handle than the previously used silane SiH4. The resulting film is more stable chemically than the silicon nitride produced by other processes. It is useful for protective and anti-reflective coatings, for insulating, and for masking, particularly on semiconductive devices.
|
