| 摘要 |
PURPOSE: To obtain a completely optical random access memory by selectively supplying two or more optical memory devices with a reading beam which has a wavelength outside the absorption light band of optoelectronic based body, and detecting a change in the phase and the polarization of the reading light beam when it returns by reflection. CONSTITUTION: When a positive voltage is supplied to an electrode 14, electrons generated in the area of the electrode are attracted to an capacitive element 8 for storage, and optoelectric charges (electrons) are generated in the capacitive element 8 by a writing light beam having a wavelength within a range of the light absorption band of the optoelectronic base body 10 and stored therein. Existence of optoelectric charges is determined according to a change in phase and/or polarization of the reading light beam remotely reflected from the electrode 14, and the reading light beam has a wavelength outside of the absorption band of the optoelectronic base body 10. To eliminate the charges stored in the capacitive element 8, a photo FET 16 is optically changed over to ON (writing beam), and the bias voltage supplied to the electrode of the capacitive element 8 is thereby short-circuited. Consequently, a completely optical random access memory can be formed. |
