| 摘要 |
<p>PURPOSE:To obtain a mesa type semiconductor device which does not produce any crack or chip in its glass protection films at the scribing and pelletizing by forming the glass protection films and silicon exposed parts of longitudinal and transverse line form on the bottom part of mesa groove parts. CONSTITUTION:Mesa grooves 5 are formed in a substrate 1 having a PN junction 4 and photo resist films 6 are formed only on the bottom part thereof. Next, glass powder 7 is deposited in the mesa groove parts having been removed of the photo resist films 6 and is heated and melted to form glass protection films 8. At the same time the photo resist films 6 are thermally decomposed to let the bottom part of the mesa grooves to be exposed. Next, scribe grooves 14 are formed by a laser beam with the silicon exposed parts formed in the bottom parts of the mesa grooves 5 as a center. At the time of pelletizing the substrate by pressing with rollers, contact between the adjoining pellets with themselves does not occur and therefore fresh production of cracks and chips in the glass films does not occur.</p> |
