发明名称 DIFFERENTIALFORSTERKARE MED MOS-FELTEFFEKTTRANSISTORER
摘要 A MOS-FET differential amplifier with two field effect transistors T11, T12 has two Zener diodes, D11, D12, provided to protect the gate electrodes from static charges. These Zener diodes are arranged with mutually opposed polarity in a series path between the gate electrodes, and are only coupled to the substrate via a feedback arm of an amplifier transistor T13 connected in the output path. This results in the gate electrodes not being subjected to the gate-source voltage, but merely to the offset voltage between the two field effect transistors. <IMAGE>
申请公布号 SE7811747(A) 申请公布日期 1979.05.17
申请号 SE19780011747 申请日期 1978.11.14
申请人 * SIEMENS AG 发明人 O W * MOSER;P * THILO
分类号 H03F1/52;(IPC1-7):H03F3/45 主分类号 H03F1/52
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