发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To form the current hogging logic circuit featuring a high-density constitution by eliminating use of the base connection region of the lateral pnp-element and the npn-element and omitting the connection between and the output collector and the base of the npn-element. CONSTITUTION:The substrate of ehr pnp<+> 3-layers is prepared, and n<+>-layer 80 is formed selectively to p-layer 30. Then groove 100 and 200 are formed through the anisotropic etching. Groove 100 is deepened to reach n-layer 70 by adjusting the opening measurement of using mask 500, and grooves 200 is deepened to reach n<+>- layer 10 respectively. After this, insulating film 90 is formed with Al electrode 41, 51 and 81 provided to each region, and the ohmic contact the the base is secured through the bottom surface. Layer 40 turns to the emitter of the pnp element, and layer 80 turns to the collector of the npn element each. In such way, the current hogging ligic circuit can be formed with an extremely small area and a high density.
申请公布号 JPS5460578(A) 申请公布日期 1979.05.16
申请号 JP19770126816 申请日期 1977.10.24
申请人 KOGYO GIJUTSUIN;CHO LSI GIJUTSU KENKYU KUMIAI 发明人 TARUI YASUO;SEKIKAWA TOSHIHIRO
分类号 H01L27/082;H01L21/331;H01L21/8222;H01L21/8226;H01L27/02;H01L29/73;H03K19/091 主分类号 H01L27/082
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