| 摘要 |
PURPOSE:To avoid the usage of Ti, by simultaneously forming the wiring metal and the ohmic and Shottkey barrier diode metal, through the insertion of polycrystal Si layer beween the SiO2 film and Pt layer on the semiconductor substrate. CONSTITUTION:N<+> type region 2 is formed by diffusion on the P type Si substrate 1, SiO2 film 3 is coated on the entire surface, and opening is made on the given region on the substrate 1 and the region 2. Next, in the opening, Pt Si alloy layer 4 is formed, and the polycrystal Si layer 11 to improve the adaptability of Pt and SiO2 from the region 2 of the film 3 remaining to the end of the substrate 1 is deposited. After that, Pt layer 6 is placed by covering the alloy layer 4 and Si layer 11, and on it, the Shottky barrier diode metal of Au or Al is coated. Further, on the alloy layer 4 of the opening of the substrate 1, Au or Au metal is coated via the Pt layer 6. |
