| 摘要 |
<p>1323797 Cathode materials and processing HEWLETT-PACKARD CO 19 April 1971 [8 June 1970] 26569/70 Heading H1D A cold cathode comprises a monocrystalline semi-conductor having p- and n-type regions 12, 10, a rnetal layer 14 in contact with the p-type region, and a coating 16 on the metal layer to lower to work function. The p-type layer 12 is formed by diffusing Zn into monocrystalline ntype GaAs 0.7 P 0.3 substrate 10 through a SiN x mask 32. An Au contact 34 is formed over the p-type layer and Ag or Au and Cs or BaO layers 14, 16 subsequently vacuum deposited. A Au- Sb film 30 is formed on the other face of the substrate 10. Several cathodes may be formed in a substrate and used in a C.R.T.</p> |
