发明名称 |
Method of low dose phoshorus implantation for oxide passivated diodes in {21 100{22 {0 P-type silicon |
摘要 |
Low dosage phosphorus implantation regions in <100> P-type silicon are subjected to a severe damage implant with halogen or silicon ions, preferably fluorine and chlorine. This permits anneal in a strongly oxidizing atmosphere for PN junction passivation, without concurrently inducing PN junction leakage. Oxide passivated PN junctions are formed having leakages as low as when the low dose phosphorus implants are annealed in other atmospheres, or are formed in <111> silicon.
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申请公布号 |
US4144100(A) |
申请公布日期 |
1979.03.13 |
申请号 |
US19770856643 |
申请日期 |
1977.12.02 |
申请人 |
GENERAL MOTORS CORPORATION |
发明人 |
MACIVER, BERNARD A.;GREENSTEIN, EUGENE |
分类号 |
H01L21/265;H01L21/316;(IPC1-7):H01L21/26;H01L7/54 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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