发明名称 |
Optical semiconductor device with resonant cavity tunable in wavelength, application to modulation of light intensity |
摘要 |
Optical semiconductor device with resonant cavity tunable in wavelength, application to modulation of light intensity.This device comprises a resonant cavity (2) delimited by two mirrors (4, 6) and at least one super-lattice (14) that is placed in the cavity and is formed from piezoelectric semiconducting layers, and means (20) of injecting charge carriers into the super-lattice. The optical properties of this super-lattice can thus be modified and the wavelength of cavity resonance modes can be offset. The invention is particularly applicable to optical telecommunications.
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申请公布号 |
US6396083(B1) |
申请公布日期 |
2002.05.28 |
申请号 |
US20000603897 |
申请日期 |
2000.06.26 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
ORTIZ VALENTIN;PELEKANOS NIKOLAOS |
分类号 |
G02F1/015;G02F1/017;G02F1/21;H01L33/00;H01S5/062;H01S5/10;H01S5/183;H01S5/32;H01S5/323;H01S5/34;(IPC1-7):H01L33/00 |
主分类号 |
G02F1/015 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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