发明名称 Optical semiconductor device with resonant cavity tunable in wavelength, application to modulation of light intensity
摘要 Optical semiconductor device with resonant cavity tunable in wavelength, application to modulation of light intensity.This device comprises a resonant cavity (2) delimited by two mirrors (4, 6) and at least one super-lattice (14) that is placed in the cavity and is formed from piezoelectric semiconducting layers, and means (20) of injecting charge carriers into the super-lattice. The optical properties of this super-lattice can thus be modified and the wavelength of cavity resonance modes can be offset. The invention is particularly applicable to optical telecommunications.
申请公布号 US6396083(B1) 申请公布日期 2002.05.28
申请号 US20000603897 申请日期 2000.06.26
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 ORTIZ VALENTIN;PELEKANOS NIKOLAOS
分类号 G02F1/015;G02F1/017;G02F1/21;H01L33/00;H01S5/062;H01S5/10;H01S5/183;H01S5/32;H01S5/323;H01S5/34;(IPC1-7):H01L33/00 主分类号 G02F1/015
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