| 摘要 |
1533218 Semiconductor devices INTERNATIONAL BUSINESS MACHINES CORP 10 March 1977 [30 June 1976] 10181/77 Heading H1K Two levels of wiring 2, 11 are formed on either side of a conductive ground plane 8 on a semiconductive substrate 1 by employing anodizable metals such as Al, Nb or alloys of Hf, Nb, Mo, Re, Ru and W for the various conductors, and anodizing the metal to form insulation 7, 9 between the conductors. A substrate-insulating layer 3 is formed by oxidizing the substrate 1 or a thin metal film on the substrate 1, which is Si rendered semi-conductive by B-doping. The conductors 2, 11 may be X and Y conducductors of a gating device 10. Alternatively the device 10 may be a Josephson device or a semiconductor device. |
