| 摘要 |
The integrated circuit is manufactured upside down relative to conventional silicon-on-sapphire (SOS) processing techniques for manufacturing field effect transistors. First a conductive pattern, typically of a refractory metal, is deposited and defined on an insulating substrate, such as sapphire, and then silicon transistors are formed over the conductive pattern. Using the process, a masking step, namely the contact definition mask, used in conventional SOS manufacture, is eliminated. |
