| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
PURPOSE:To speed writing and reading by inducing avalanche breakdown in the third gates provided through insulation layer on a floating gate and a control gate and capturing electrons in the floating gate. |
| 申请公布号 |
JPS53119691(A) |
申请公布日期 |
1978.10.19 |
| 申请号 |
JP19770034237 |
申请日期 |
1977.03.28 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
ZOUDA YASUTAMI |
| 分类号 |
H01L27/112;H01L21/8246;H01L21/8247;H01L29/417;H01L29/788;H01L29/792 |
主分类号 |
H01L27/112 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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