发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain the resistor controlling the resistance value strictly, by processing Si made to non-crystal condition with As ion injection at comparatively low temperature, recrystalizing only a part, and activating the injected As.
申请公布号 JPS53118991(A) 申请公布日期 1978.10.17
申请号 JP19770033871 申请日期 1977.03.26
申请人 FUJITSU LTD 发明人 SAKURAI TERUO;NISHI HIDETOSHI
分类号 H01L27/04;H01L21/265;H01L21/822;H01L29/8605 主分类号 H01L27/04
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