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发明名称
SEMICONDUCTOR DEVICE
摘要
PURPOSE:To fabricate the highly-integrated C-type MOS element by combining and constituting n-channel MOS and p-channel J-type FET on a semiconductor or insulating plate.
申请公布号
JPS5378784(A)
申请公布日期
1978.07.12
申请号
JP19760155292
申请日期
1976.12.23
申请人
FUJITSU LTD
发明人
TOUGEI YOSHIIKU
分类号
H01L29/80;H01L21/337;H01L21/8238;H01L27/08;H01L27/085;H01L27/092;H01L27/12;H01L29/78;H01L29/786;H01L29/808
主分类号
H01L29/80
代理机构
代理人
主权项
地址
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