| 发明名称 |
MANUFACTURE OF FIELD EFFECT SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To obtain a high dielectric strength as well as a high output by forming a depletion layer to enhance the drain dielectric strength inside the substrate and connecting in series the input MOSFET and the output junction type FET. |
| 申请公布号 |
JPS5374385(A) |
申请公布日期 |
1978.07.01 |
| 申请号 |
JP19760149717 |
申请日期 |
1976.12.15 |
| 申请人 |
HITACHI LTD |
发明人 |
OKABE TAIAKI;YOSHIDA ISAO;TORIYABE TATSU;OCHI SHIKAYUKI |
| 分类号 |
H01L29/78;H01L21/265;H01L21/336;H01L27/085;H01L29/08 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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