摘要 |
<p>PURPOSE:To apply a one-layer aluminum wiring pattern process to a multilayer aluminum wiring pattern process by a method wherein positions of input pins and output pins in a multilayer aluminum wiring process are aligned with positions of the same pins in a one-layer aluminum wiring process. CONSTITUTION:A pattern of an input electrode 13 composed of an aluminum wiring part in a second layer is completely the same shape as a pattern of a gate electrode 11 composed of a polysilicon wiring part at a lower layer; in the same manner, a pattern of an output electrode 14 is the same as a pattern of an output electrode 12 at a lower layer excluding a connecting part to a connecting electrode 5. The gate electrode 11 and the input electrode 13 are wired in an identical input-pin position; the output electrodes 12, 14 are wired in an identical output-pin position. Accordingly, a one-layer aluminum wiring process can be used for a two-layer aluminum wiring process. Thereby the one-layer aluminum wiring process can be used for a multilayer aluminum wiring process.</p> |