发明名称 ALIGNMENT PATTERN FORMING METHOD FOR MASK ALIGNMENT
摘要 PURPOSE:To make possible the recognition of pattern serrations definitely despite existence of inteference fringes by etching the metal gloss surface of a wafer according to the alignment patterns on the wafer, then coating thereon a resist film.
申请公布号 JPS52139374(A) 申请公布日期 1977.11.21
申请号 JP19760055391 申请日期 1976.05.17
申请人 HITACHI LTD 发明人 KUJI TOMOHIRO;AKIYAMA NOBUYUKI;KOIZUMI MITSUYOSHI
分类号 H01L21/027;H01L21/302 主分类号 H01L21/027
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