| 摘要 |
1490410 Light-emitting PN diodes MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 15 July 1975 [15 July 1974] 29689/75 Heading H1K In a green light emitting gallium phosphide PN diode the P and N zones, both grown by liquid phase epitaxy, include nitrogen to provide trapping centres and the P zone is doped with zinc to give a net acceptor concentration adjacent the junction of 1À5 x 10<SP>18</SP> to 3À5 x 10<SP>10</SP> atoms/cc. In a preferred embodiment both zones are formed in a single run liquid phase epitaxy process in the apparatus described with reference to Fig. 1 (not shown), the melt containing gallium, polycrystalline GaP and sulphur doped GaP during growth of an N layer to give a net donor doping of 9 x 10<SP>16</SP>, nitrogen being introduced into the hydrogen flow through the apparatus after stabilization of the melt. To form the P layer grains of zinc contained in a side tube are tipped into the melt to give a zinc concentration therein of 0À18-0À35 mol per cent and after a period of melt stabilization growth is resumed at the same cooling rate of 3‹C/minute. In an alternative method after formation of the N layer a zinc source in the apparatus is vaporized by heating to dope the melt to a concentration determined by the zinc source temperature, while in another the P and N layers are grown from separate melts. |
