发明名称 |
SPACE CHARGE LIMITED TRANSISTOR HAVING RECESSED DIELECTRIC ISOLATION |
摘要 |
<p>A space charge limited transistor formed on a high resistivity substrate of at least 10,000 ohm-centimeter silicon of one conductivity type. One surface of the substrate is provided with spaced recessed oxide regions. The alternate spaces between the oxide regions are occupied by impurity zones of said one conductivity type. The intervening alternate spaces between the oxide regions are occupied by impurity zones of the other conductivity type. The impurity concentrations of the aforesaid impurity zones are at least several orders of magnitude higher than that of the substrate where the zones are separated from each other by the aforesaid oxide regions. The dielectric relaxation time is much larger than the carrier transit time within the substrate below and between adjacent impurity zones of the same conductivity type.</p> |
申请公布号 |
CA1019462(A) |
申请公布日期 |
1977.10.18 |
申请号 |
CA19740213805 |
申请日期 |
1974.11.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MAGDO, INGRID E.;MAGDO, STEVEN |
分类号 |
H01L29/80;H01L21/331;H01L21/337;H01L21/762;H01L27/00;H01L29/00;H01L29/73;H01L29/808 |
主分类号 |
H01L29/80 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|