| 摘要 |
1488329 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 24 May 1976 [30 June 1975] 21374/76 Heading H1K A method of manufacturing a semi-conductor device characterized by the use of an InSb substrate and an anodized InSb insulating layer, comprises the steps, not necessarily performed in the order given, of anodizing the entire substrate surface or anodizing the substrate surface while protecting it from anodization at preselected locations, ion-implanting an impurity of a conductivity type opposite to that of the substrate in at least one preselected region of the substrate, annealing the substrate subsequent to ion-implantation, then, if the entire substrate surface was anodized, removing the anodized material at preselected locations to expose the substrate, and depositing a plurality of electrical contacts at the preselected locations which were either protected from anodization or were exposed by the removal of the anodized layer, one of the contacts contacting the ionimplanted region. InSb is anodized in a KOH or KNO 2 solution under yellow light. A photoresist or electron-beam sensitive resist is used as a mask if the entire substrate surface is not to be anodized, and the unanodized regions are later provided with ohmic electrical contacts, e.g. source and drain contacts 4, 6 in a MOSFET or emitter, base and collector contacts (16, 17, 18) Fig. 2 (not shown) in a bipolar device. When the entire substrate surface is anodized, the anodized layer 14 is chemically etched at preselected locations either immediately after the anodization, or subsequent to the ion-implantation or subsequent to the annealing of the substrate at a temperature of between 200‹ and 300‹ C. Ion-implantation using a photoresist or electron beam sensitive resist as a mask is carried out between - 200‹ and 100‹ C. and preferably at room temperature. Electrical contacts which are deposited either by sputtering, vacuum evaporation or chemical vapour deposition are typically of gold, or indium-cadmium alloys and are sintered at a temperature of between 20‹ and 100‹ C.
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