发明名称 Apparatus for depositing thin layers of materials by reactive spraying in a high-frequency inductive plasma
摘要 A method and apparatus for depositing thin layers of insulating or slightly conductive materials involves reactive spraying through high-frequency inductive plasma. The conductive component of the material to be deposited is sprayed in a first chamber through which an ionizable inert gas travels, the sprayed particles then passing through a second chamber in which a substrate is placed and to which a reactive gas is supplied.
申请公布号 US4050408(A) 申请公布日期 1977.09.27
申请号 US19750633263 申请日期 1975.11.19
申请人 EUROPEAN ATOMIC ENERGY COMMUNITY (EURATOM) 发明人 BEUCHERIE, PIERRE
分类号 C23C14/08;C01B13/14;C23C14/00;C23C16/50;H01B3/00;H01G4/33;(IPC1-7):C23C13/12;B23K5/00 主分类号 C23C14/08
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